PART |
Description |
Maker |
UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM
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TOKO, Inc. EPCOS AG
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CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes 4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
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Intel Corporation Intel Corp.
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BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BB |
3.3V, 20W DC-DC converter 15V, 20W DC-DC converter 12V, 20W DC-DC converter Analog IC 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 18-Mbit QDR-II SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 20W DC-DC Converter(输出功率20WDC-DC转换
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M.S. Kennedy Corp. M.S. Kennedy Corporation
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CY7C1441AV33 CY7C1443AV33 CY7C1447AV33 |
36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM(36-Mb (1M x 36/2M x 18/512K x 72)流通式SRAM)
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Cypress Semiconductor Corp.
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AB28F400BX-T90 A28F400BX-B AB28F400BX-B90 |
4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT 256K x16/ 512K x8 BOOT BLOCK FLASH MEMORY FAMILY JT 23C 2#16 21#20 SKT RECP JT 32C 32#20 PIN RECP 4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY 4兆位56K x16。为512k × 8)启动块闪存系列 4-MBIT (256K x16, 512K x8) BOOT BLOCK FLASH MEMORY FAMILY
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http:// Intel Corporation Intel Corp. Intel, Corp.
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CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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SST29VF010-70-4C-NH SST29SF010-70-4C-NH SST29SF040 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 2.7V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 2.7V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 5V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 5V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 2.7V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 2.7V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 5V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 5V PROM, 70 ns, PDIP32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 70 ns, PDIP32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 5V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 70 ns, PDIP32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 70 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512千位/ 1兆位/ 2 4兆位(8)小部门闪光
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Silicon Storage Technol... SILICON STORAGE TECHNOLOGY INC Elektron Technology PLC Silicon Storage Technology, Inc.
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CY7C1370DV25 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)管道式SRAM(NoBL结构 18兆位(为512k × 36/1M × 18)与总线延迟建筑18 MB的(12k × 36/1M × 18)管道式静态存储器(总线延迟结构)流水线的SRAM
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Cypress Semiconductor Corp.
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CY62148DV30L CY62148DV30L-55ZSXI CY62148DV30LL CY6 |
4-Mbit (512K x 8) MoBL垄莽 Static RAM 4-Mbit (512K x 8) MoBL? Static RAM
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Cypress Semiconductor
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